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On July 25, 2026, the one-day 7th International Conference on Semiconductor Application Technology concluded successfully! Co-organized by 21Power and Electronics Study Club, the grand event was held at the Courtyard by Marriott Shenzhen. The conference focused on trending sectors including new energy solar and energy storage, AI computing power supply, humanoid robots, and power electronics drives, bringing together industry experts and upstream and downstream partners to discuss the forefront of the industry.
Shenzhen World Industrial Co., Ltd. showcased its Power MOSFET series at Booth A30, engaging in in-depth, face-to-face discussions with numerous industry peers and achieving highly fruitful outcomes.
Event Recap
At the event, numerous partners stopped by our booth for in-depth exchanges. Discussions centered around critical application pain points, including solar and energy storage inverters, humanoid robot drives, and switching power supply solutions. Many clients engaged in profound communications regarding device parameters, sample compatibility, and project customization, resulting in multiple cooperation intentions.
Event Highlights：
At this exhibition, we prominently showcased two core product lines.
Motor Drive MOSFET Series：
Covering a 30V–150V voltage platform, this series is available in a variety of packages including TO-252, TO-247, PDFN5x6, and SOP-8. Featuring low on-resistance (Rds(on)) and high-speed switching characteristics, it is perfectly tailored for humanoid robots and low-power power electronics drive scenarios, providing high-performance component support for motor drive solutions.
Dedicated Power Devices for PV Inverters and Energy Storage Systems：
We have introduced 900V and 1500V high-voltage MOSFET products tailored for new energy scenarios, including PV inverters, energy storage Power Conversion Systems (PCS), UPS power supplies, and high-voltage DC/DC converters. Leveraging the advantages of low switching losses and high power density, these devices empower new energy solar and energy storage systems to maximize overall operational efficiency.
Our devices feature core advantages including an ultra-low Figure of Merit (FOM = Qg × Rds(on)), low on-resistance, high blocking voltage, and exceptional switching performance. These characteristics effectively reduce equipment cooling requirements and enable higher system operating frequencies, perfectly aligning with the rapid development demands of new energy, robotics, and AI power supplies.
