• Product
    • Rectifier Devices
      • Rectifier Bridge
        • Soft Recovery Bridge
          Product Description

          By Optimizing the diode Ta/Tb (Turn-on time/Turn-off  time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.

          Product Feature
          1
          Improve the EMI/EMC
          Improve low frequency conduction characteristic and reduce the stray inductance of AC input lines,suppress high-frequency interference caused by AC input voltage rectification through smooth recovery characteristic of rectifier diodes in rectifier bridge stack.
          2
          Save BOM costs
          Effectively reduce the use of common-mode inductor and X capacitor at the input terminal, change from ordinary common-mode inductor + X capacitor+ differential-mode inductor to Pi ( π) filter (CLC filter) to reduce the BOM costs.
          More
        • Standard-Rectifier Bridge
          Product Description

          The connection point of the negative poles of the two diodes is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic. 

          Product Feature
          1
          Standard Rectifier Bridge
          The rectifier in the rectifier bridge completes the work through the unidirectional conductivity of the diode.To put it simply, the diode is unidirectional, it is forward conduction and reverse cut-off. The diode only allows current to flow in one direction, so when it is connected to the AC circuit, it can make the current in the circuit flow only in one direction, what is called ”rectifier”
          More
        • Schottky Rectifier Bridge
          Product Description

          The Schottky rectifier bridge product is connected by four Schottky silicon diode bridges with four lead pins. The connection point of the negative pole of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive pole of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic

          Product Feature
          1
          Foward Voltage Drop
          Low forward voltage drop
          2
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • LOW VF Rectifier Bridge
          Product Description

          The LOW VF rectifier bridge product is connected by four low-voltage drop rectifier silicon chips as a bridge, with four lead pins. The connection point of the two diode negative poles is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the two diode positive poles is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic. LOW VF is a rectifier bridge with ultra low forward voltage drop.

          Product Feature
          1
          Low VF Rectifier Bridge
          LOW VF rectifier bridge refers to a forward voltage drop lower than a standard rectifier bridge, according to the Calorie calculation formula Q = I2Rt = Pt = UIt = U2t/R = I2Rt. The lower voltage, the less heat is generated and the corresponding active power is higher. Therefore, in the same power application circuit , the efficiency of the LOW VF rectifier bridge is higher and the heat is lower.
          More
        • Inverter Bridge
          Product Description

          The Inverter Bridge is  integrated by four fast recovery diodes,which package four chips on a bracket for bridge connection with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the DC output terminal, the connection point of the positive poles of the two diodes is the "negative pole" of the DC output terminal, and the other two pins are the AC input terminals, which is packaged with insulation plastic .

          Product Feature
          1
          Inverter Bridge
          The inverter Bridge has a high operating frequency (10KHz-70KHz) and small PCBA space; the reverse recovery time is relatively short with 75ns and the stray capacitance is relatively small, so it has advantages of EMI improvement.
          More
        • Sampling Bridge
          Product Description

          A rectifier bridge with integrated sampling function, which realizes power distribution and circuit protection by collecting input current in the circuit.

          Product Feature
          1
          1)Relatively Low temperature coefficient of resistance and wider operating temperature range (below 480 ° C)
          It has a low temperature coefficient of resistance, low temperature drift and relatively stable output power.The precision resistor is packaged inside the rectifier bridge, and heat sink can be used to dissipate heat from the precision resistor, effectively reducing the temperature of the precision resistor and reducing the impact of temperature rise on the resistance value.
          2
          2)Simplify the PCB assembly process to reduce the assembly cost, and achieve high consistency.
          Simplify the PCB assembly process, reduce the assembly cost and is cost-effective. Improve the problems of complicated installation process of external precision resistors and poor consistency of resistance values with high defect rate during mass production. Improve power consistency and stability with high consistency during mass production.
          3
          Reduce interference
          Improve the problem of interference increase and acquisition accuracy deviation caused by precision resistors crossing the circuit board and the main loop being too long.
          More
        • Switching Bridge
          Product Description

          The switching bridge is connected by four high-speed switching diodes as a bridge, with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is sealed with insulation plastic.

          Product Feature
          1
          Switching Bridge
          The switching bridge has extremely low forward voltage drop and extremely high switching speed. With its extremely low loss and fast switching speed, it is widely used in the power grid monitoring, smart meters, instruments and other industries.
          More
      • Schottky Barrier Diode
        • Standard Schottky Diode
          Product Description

          World Schottky diode uses advanced packaging technology and have the characteristics of low forward voltage drop. The current covers 1A to 60A, and the voltage covers from 40V to 200V, which can meet the high efficiency and high reliability requirements of power products.

          Product Feature
          1
          Forward Voltage Drop
          Low forward voltage drop
          2
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • LOW VF Schottky
          Product Description

          World LOW VF Schottky diode adopts advanced Trench technology with very low VF value and extremely low high- temperature leakage current, which can better meet the high efficiency and high reliability requirements of power supply.

          Product Feature
          1
          VF value
          Very low VF value (see Product selection list for detail)
          2
          Leakage Current
          Extremely low high-temperature leakage current (see IR value in Product selection list for detail)
          3
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • High-Voltage Schottky
          Product Description

          World high-voltage Schottky diode has a low VF value and extremely low reverse leakage current (Ir),  showing the good low-temperature rise characteristics.  The VRRM is up to 350V, and the current range covers from 5A to 40A, which can better meet the high-efficiency and high-reliability requirements of high-voltage output power supplies.

          Product Feature
          1
          VF value
          Lower VF value ( (see product selection list for detail)
          2
          Reverse Leakage Current
          Extremely low reverse leakage current (Ir)
          3
          Packages
          Multiple packages to meet all kinds of power supply requirements
          More
      • Fast Recovery Diode
        • Standard Fast Recovery Diode
          Product Description

          World Fast recovery diode adopts advanced package technology, with voltages from 100V to 1700V, current ranging from 1A to 300A, and reverse recovery time from 16ns to 500ns. It is suitable for PFC circuits, high-frequency and high-voltage power supply, etc.

          Product Feature
          1
          Voltage Ranges
          Ultra-wide range of voltage ranges
          2
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • Low Trr Super Fast Recovery Diode
          Product Description

          World Low Trr Super Fast Recovery Diode has an extremely low reverse recovery time Trr and an extremely low reverse recovery charge Qrr, as well as super-fast switching speed. It is used in PFC circuits under hard switching conditions and secondary rectification circuits of high-voltage and high-frequency power supplies.

          Product Feature
          1
          TRR and QRR
          Extremely low Trr and Qrr (see product selection list for detail)
          2
          Leakage Current
          Low leakage Current
          3
          Switching Speed
          Super fast switching speed
          4
          Switching Loss
          Reduce switching losses
          More
        • Low VF Fast recovery Diode
          Product Description

          World LOW VF Fast recovery diode has low VF value and low leakage current, which is applied to PFC circuit, high-frequency and high-voltage circuit, and secondary rectifier circuit.

          Product Feature
          1
          VF value
          Low VF value
          2
          Leakage Current
          Low leakage current
          3
          Switching Speed
          Super fast switching speed
          More
        • Common-Cathode and Common-Anode FRD
          Product Description

          World Common-Cathode and Common-Anode Fast recovery diode has the characteristics of good consistency, low VF value, low Trr  and low leakage current, which is applied to high-frequency bridge rectifier circuit, positive and negative voltage output rectifier circuit and high-frequency high-voltage high-current circuit.

          Product Feature
          1
          VF Value
          Low VF value
          2
          Reverse recovery time
          Low-reverse recovery time
          3
          Leakage Current
          Low leakage current
          More
      • Switching Transistor
        • All series
          Product Description

          World switching transistor has a fast recovery time and high switching speed, and is widely used in power supply, audio, video, wireless communication, industry and other fields

          Product Feature
          1
          TRR
          Smaller Trr (reverse recovery time)
          2
          Switching speed
          Fast switching speed
          3
          Package
          Small package,small size
          More
    • Protection Devices
      • TVS
        • TVS
          Product Description
          Transient Suppression Diode, TVS. All series of products are available
          Product Feature
          1
          TVS
          TVS is a high-quality surge absorber, which is connected in parallel with diodes (volt-ampere characteristics) in the circuit.Induced lightning strikes in nature, electrostatic discharge, and current surges in electronic devices all pose severe challenges to modern electronic systems. When transient voltages are generated in the circuit, TVS uses the avalanche principle to instantly shunt and limit the voltage with a response speed of P seconds, thus protecting the load from damage.
          More
      • ESD
        • ESD
          Product Description

          Antistatic devices, ESD. For mainstream competing products, our company has alternative products, and we accept customized materials for ESD

          Product Feature
          1
          ESD
          ESD, (Transient Voltage Suppressor) (semiconductor) static suppressor, a miniaturized TVS, has the same characteristics and working methods as TVS. However, with the reduction of the internal chip area, it has the characteristics of small size, small capacitance value (capacitance and volume are proportional), and diverse packaging methods. It is mainly used for anti-static and anti-small pulse group processing of some small portable devices. For ESD TVS multi-channel protection products, they are also called array products (IC).
          More
      • GDT
        • GDT
          Product Description

          Gas Discharge Tube, GDT. A full range of products are available, and ultra-thin products are currently being developed.

          Product Feature
          1
          GDT
          GDT "Ceramic Gas Discharge Tube" is a short-circuit protection device packaged in ceramic and filled with low-voltage inert gas. It is generally divided into two-electrode and three-electrode structures. The basic working principle is gas discharge. When the electric field strength between the electrodes exceeds the breakdown strength of the gas, it causes gap discharge, thereby limiting the voltage between the electrodes and protecting other devices connected in parallel with the discharge tube.
          More
      • MOV
        • MOV
          Product Description

          Zinc oxide varistor, MOV. Our company only produces SMD-MOV patch products and GMOV composite functional products.

          Product Feature
          1
          MOV
          MOV is a metal oxide semiconductor nonlinear resistor component mainly composed of zinc oxide. The so-called varistor is sensitive to voltage. When the voltage reaches a certain value, the component starts to operate.
          More
      • TSS
        • TSS
          Product Description

          Thyristor Surge Suppressors,TSS. All products are available

          Product Feature
          1
          TSS
          TSS is a PNPN component, a free voltage-controlled thyristor without a gate electrode. When the voltage exceeds its peak off-state voltage (or avalanche voltage), semiconductor discharge will clamp the transient voltage to the switching voltage (or turning voltage) value of the component. As the voltage continues to increase, the semiconductor discharge tube enters the conducting state due to negative resistance effect. Only when the current is less than the maintenance current, the component resets and returns to its high impedance state.
          More
    • Power Devices
      • MOS
        • SGT MOS
          Product Description

          World SGT MOS has extremely low RDs (on), low Qg and Ciss, and fast switching speed, which can meet the requirements of product temperature rise and efficiency.

          Product Feature
          1
          FOM value
          Lower FOM (RDs (on) * Qg) value
          2
          Swithing Speed
          Fast switching speed
          3
          Package
          Multiple packages to meet various power needs
          More
        • Planar MOS
          Product Description

          World Planar MOS has the characteristics of low RDs (on) and Ciss ,as well as strong EAS performance, which can meet the requirements of product efficiency and reliability.

          Product Feature
          1
          RDs(on) and CISS
          Low RDs (on) and Ciss
          2
          EAS Performance
          Strong EAS performance
          3
          Package
          Multiple packages to meet various power needs
          More
        • Trench Mos
          Product Description

          World Trench MOS has low RDs (on), Qg, and Ciss, fast switching speed, strong EAS performance, and short -circuit resistance performance, which can meet the requirements of product efficiency and reliability.

          Product Feature
          1
          FOM Value
          Lower FOM (RDs (on) * Qg) value
          2
          EAS Performance
          Strong EAS performance
          3
          Short Circuit Resistance
          Short circuit resistance
          4
          Package
          Multiple packages to meet various power needs
          More
        • SJ MOSFET
          Product Description

          World SJ (Super Junction) MOS adopts a multi-layer Epitaxial process, which has the characteristics of low RDS (on), small junction capacitance, small Qg, easy driving, and fast switching speed, making it easier for the power supply to achieve high efficiency and high reliability.

          Product Feature
          1
          RDS
          Low RDS
          2
          Switching speed
          Fast switching speed
          3
          Junction Capacitance
          Small junction capacitance, small Qg, easy to drive
          4
          Packages
          Various Packages to meet different power supply request
          More
    • 3rd Generation Semiconductor
      • SiC
        • SiC DIODE
          Product Description

          World silicon carbide diodes have extremely small reverse recovery time, high surge current, high efficiency and reliability, and are packaged with PDFN5 * 6, TO-252, TO-220, TO-247, etc.

          Product Feature
          1
          TRR
          Extremely small TRR
          2
          Surge Current
          High surge current
          3
          Switching speed
          Fast switching speed
          4
          Packages
          Various packages
          More
        • SiC MOS
          Product Description

          World silicon carbide MOS has low RDS (on) , high switching speed, high efficiency and reliability, and is packaged in TOLL, TO-247, etc.

          Product Feature
          1
          RDS(on)
          （RDS（on））Low on-resistance (RDS(on))
          2
          Switching speed
          High switching speed
          More
    • EMI Improvement
      • Absorb Diode Rectifier
        • 30M-60M Radiation
          Product Description

          World Absorb Diode Rectifier,it has a longer storage time and lower Irr, as well as a longer and gentle slope of reverse recovery characteristics which can smoothly recover the current. It is applied to the RCD absorption circuit of power supply for better EMI characteristics to meet high efficiency and high reliability requirements of power supply products.

          Product Feature
          1
          Lower No-load Loss
          SOD-123FL Package, with Lower no-load loss
          2
          Efficiency
          Light load at 10%, the conversion efficiency is improved by 2% - 3%, and the comprehensive efficiency is increased by 0.8%
          3
          EMI Radiation
          Improvement of EMI radiation for 30MHZ~60MHZ frequency
          More
      • Soft Recovery Bridge
        • 9K-1M Conduction
          Product Description

          By Optimizing the diode Ta/Tb (Turn-on time/Turn-off  time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.

          Product Feature
          1
          Improve the EMI/EMC
          Improve low frequency conduction characteristic and reduce the stray inductance of AC input lines,suppress high-frequency interference caused by AC input voltage rectification through smooth recovery characteristic of rectifier diodes in rectifier bridge stack.
          2
          Save BOM costs
          Effectively reduce the use of common-mode inductor and X capacitor at the input terminal, change from ordinary common-mode inductor + X capacitor+ differential-mode inductor to Pi ( π) filter (CLC filter) to reduce the BOM costs.
          More
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GDT

Product Description

Gas Discharge Tube, GDT. A full range of products are available, and ultra-thin products are currently being developed.

Product Feature

1
GDT
GDT "Ceramic Gas Discharge Tube" is a short-circuit protection device packaged in ceramic and filled with low-voltage inert gas. It is generally divided into two-electrode and three-electrode structures. The basic working principle is gas discharge. When the electric field strength between the electrodes exceeds the breakdown strength of the gas, it causes gap discharge, thereby limiting the voltage between the electrodes and protecting other devices connected in parallel with the discharge tube.

Application Circuit

                              AC Power                                                                                                               DC Power


                                

                                         RJ45-1G

Application Field
SPD
SPD
LED Power Supply
LED Power Supply
RRU
RRU
FSU
FSU
Product selection

For detailed specifications, please contact the sales staff.

GDT：2R-SMD two-pin patch signal tube (Partial models listed)

2R-SMD系列名 型号 直流击穿电压100V/s（V） 100V/s电压范围（V） 脉冲击穿电压1kV/μs（99%）（V） 脉冲击穿电压1kV/μs（V） 脉冲耐流8/20μs,In（kA） 弧光电压Va @1A（V） 绝缘电阻(GΩ) 静电容量0.5VDC@1 MHz(pF) 尺寸L*W*H(mm) 应用 认证 Download
UL497B UL1449 新产品
WG2921 WG2921-075A 75 53-117 ≤650 ≤600 1 ～8 ≥1(DC=100V) ≤0.5 2.9×2.1×1.9 RS485/232/422 /Internet     ●  
WG2921-091A 90 63-117 ≤650 ≤600 1 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG2921-151A 150 105-195 ≤700 ≤650 1 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG2921-201A 200 140-260 ≤750 ≤700 1 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG2921-301A 300 210-390 ≤800 ≤750 1 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG2921-401A 400 280-520 ≤1000 ≤950 1 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG2921-601A 600 480-720 ≤1200 ≤1150 0.5 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG2921-801A 800 640-960 ≤1300 ≤1250 0.5 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG2921-102A 1000 800-1200 ≤1500 ≤1450 0.5 ～10 ≥1(DC=100V) ≤0.5 RS485/232/422 /Internet     ●  
WG3216 WG3216-091A 90 63-117 ≤700 ≤650 0.5 ～10 ≥1(DC=50V) ≤0.6 3.2×1.6×1.6 通信端口     ●  
WG3216-151A 150 120-190 ≤700 ≤650 0.5 ～10 ≥1(DC=100V) ≤0.6 通信端口     ●  
WG3216-201A 200 140-260 ≤850 ≤750 0.5 ～10 ≥1(DC=100V) ≤0.6 通信端口     ●  
WG3216-401A 400 280-520 ≤1100 ≤950 0.5 ～8 ≥1(DC=100V) ≤0.6 Ethernet     ●  
WG4250 WG4250-071A 70 53-88 ≤650 ≤600 5 ～8 ≥1(DC=25V) ≤1.0 4.2×5.0×5.0 RS485/232/422     ●  
WG4250-091A 90 72-108 ≤650 ≤600 5 ～8 ≥1(DC=50V) ≤0.8 RS485/232/422     ●  
WG4250-151A 150 120-180 ≤420 ≤320 5 ～13 ≥1(DC=100V) ≤0.8 AC Power/xDSL     ●  
WG4250-231A 230 184-276 ≤700 ≤650 5 ～8 ≥1(DC=100V) ≤1.0 RS485/232/422     ●  
WG4250-351A 350 280-420 ≤750 ≤650 5 ≥15 ≥1(DC=100V) ≤1.0 DC12V/AC24V     ●  
WG4250-471A 470 376-564 ≤850 ≤700 5 ～15 ≥1(DC=100V) ≤0.8 xDSL     ●  
WG4250-601A 600 480-720 ≤1200 ≤1100 5 ～8 ≥1(DC=100V) ≤1.0 AC Power     ●  
WG4532 WG4532-091A 90 63-117 ≤650 ≤550 2 ～8 ≥1(DC=50V) ≤0.5 4.5×3.2×2.7 同轴     ●  
WG4532-091HA 90 63-117 ≤650 ≤550 3 ～10 ≥1(DC=50V) ≤0.5 Ethernet     ●  
WG4532-151A 150 105-195 ≤750 ≤650 2 ～8 ≥1(DC=50V) ≤1.0 同轴     ●  
WG4532-151HA 150 105-195 ≤600 ≤500 2 ～8 ≥1(DC=50V) ≤1.0 同轴     ●  
WG4532-201A 200 140-260 ≤800 ≤700 2 ～8 ≥1(DC=100V) ≤1.0 同轴     ●  
WG4532-301A 300 210-390 ≤750 ≤700 2 ～15 ≥1(DC=100V) ≤1.0 DC12V/AC24V     ●  
WG4532-401A 400 360-560 ≤950 ≤800 2 ～15 ≥1(DC=100V) ≤1.0 xDSL     ●  
WG4532-601A 600 420-780 ≤1200 ≤1100 2 ～15 ≥1(DC=100V) ≤1.0 Ethernet     ●  
WG5540 WG5540-091A 90 72-108 ≤600 ≤550 5 ～15 ≥1(DC=50V) ≤0.6 5.5×4.0×4.0 RS485/232/422     ●  
WG5540-151A 150 120-180 ≤650 ≤600 5 ～12 ≥1(DC=100V) ≤0.6 AC Power/xDSL     ●  
WG5540-301A 300 240-360 ≤850 ≤800 5 ～15 ≥1(DC=100V) ≤0.6 DC Power/AC Power     ●  
WG5540-401A 400 320-480 ≤850 ≤800 5 ～15 ≥1(DC=100V) ≤0.6 Ethernet     ●  
WG5540-601A 600 480-720 ≤1200 ≤1100 5 ～15 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG5540-801A 800 640-960 ≤1400 ≤1300 5 ～15 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG5540-102A 1000 800-1200 ≤1600 ≤1500 5 ～15 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG5540-152A 1500 1200-1800 ≤2500 ≤2300 3 ～15 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG5540-202A 2000 1600-2400 ≤3000 ≤2700 3 ～35 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG5540-252A 2500 2000-3000 ≤3500 ≤3200 3 ～35 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG5540-302A 3000 2400-3600 ≤4000 ≤3700 3 ～35 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG5540-362A 3600 2880-4320 ≤4800 ≤4700 3 ～35 ≥1(DC=100V) ≤0.6 AC Power     ●  
WG8360 WG8360-091A 90 72-108 ≤600 ≤550 20 ～8 ≥1(DC=50V) ≤1.5 8.3×8.3×6.0 DC Power/同轴     ●  
WG8360-151A 150 120-180 ≤750 ≤700 20 ～12 ≥1(DC=100V) ≤1.5 DC Power     ●  
WG8360-351A 350 280-420 ≤650 ≤600 20 ～15 ≥1(DC=100V) ≤1.5 DC Power     ●  
WG8360-471A 470 376-564 ≤850 ≤800 20 ～15 ≥1(DC=50V) ≤1.5 AC Power     ●  
WG8360-601A 600 480-720 ≤950 ≤900 20 ～15 ≥1(DC=100V) ≤1.5 AC Power     ●  
WG8360-801A 800 640-960 ≤1200 ≤1150 20 ～15 ≥1(DC=100V) ≤1.5 AC Power     ●  


GDT：2R-DIP two-pin plug-in power diode(Partial models listed)

2R-DIP系列名 型号 直流击穿电压100V/s（V） 100V/s电压范围（V） 脉冲击穿电压1kV/μs（99%）（V） 脉冲击穿电压1kV/μs（V） 脉冲耐流8/20μs,In（kA） 最大脉冲耐流8/20μs,Imax（kA） 脉冲耐流10/350μs,Iimp（kA） 弧光电压Va @1A（V） 遮断续流能力Ifi（A） 绝缘电阻(GΩ) 静电容量0.5VDC@1 MHz(pF) 尺寸L*W*H(mm) 应用 认证 Download
UL497B UL1449 新产品
WG1206 WG1206-351B 350 280-420 / ≤1000 20 40 4 ～15 不适用 ≥1(DC=100V) ≤5 φ12×6 Power     ●  
WG1206-601B 600 480-720 / ≤1400 20 40 4 ～15 100Arms@Uc ≥1(DC=100V) ≤5 Power     ●  
WG1206-801B 800 640-960 / ≤1600 20 40 4 ～15 100Arms@Uc ≥1(DC=100V) ≤5 Power     ●  
WG1206-102B 1000 800-1200 / ≤2000 20 40 4 ～15 100Arms@Uc ≥1(DC=100V) ≤5 Power     ●  
WG1216 WG1216-091B 90 72-108 / ≤700 60 80 5 ～15 不适用 ≥1(DC=100V) ≤5 Φ11.5×16 Power     ●  
WG1216-351B 350 280-420 / ≤900 60 80 5 ～15 不适用 ≥1(DC=100V) ≤5 Power     ●  
WG1216-601B 600 480-720 / ≤1400 60 80 5 ～15 100Arms@Uc ≥1(DC=100V) ≤5 Power     ●  
WG1216-801B 800 640-960 / ≤1600 30 60 8 ～15 100Arms@Uc ≥1(DC=100V) ≤5 Power     ●  
WG1335 WG1335-091B 90 72-108 / ≤700 20 40 2.5 ～15 不适用 ≥0.1(DC=100V) ≤6 φ13×3.5 Power     ●  
WG1335-351B 350 280-420 / ≤900 20 40 2.5 ～15 不适用 ≥0.1(DC=100V) ≤6 Power     ●  
WG1335-601B 600 480-720 / ≤1400 20 40 2.5 ～15 100Arms@Uc ≥0.1(DC=100V) ≤6 Power     ●  
WG1335-102B 1000 800-1200 / ≤1600 20 40 2.5 ～15 100Arms@Uc ≥0.1(DC=100V) ≤6 Power     ●  
WG1503 WG1503-151B 150 120-180 / ≤750 40 40 5 ～15 不适用 ≥1(DC=100V) ≤10 φ15×3.0 Power     ●  
WG1503-231B 230 184-276 / ≤850 40 40 5 ～15 不适用 ≥1(DC=100V) ≤10 Power     ●  
WG1503-601B 600 480-720 / ≤1400 40 40 5 ～15 100Arms@Uc ≥1(DC=100V) ≤10 Power     ●  
WG1503-801B 800 640-960 / ≤1600 40 40 5 ～15 100Arms@Uc ≥1(DC=100V) ≤10 Power     ●  
WG1645 WG1645-351B 350 280-420 / ≤1000 40 60 8 ～15   ≥1(DC=100V) ≤7 φ16×4.5 Power     ●  
WG1645-601B 600 480-720 / ≤1400 40 60 8 ～15 100Arms@Uc ≥1(DC=100V) ≤7 Power     ●  
WG1645-801B 800 640-960 / ≤1600 40 60 8 ～15 100Arms@Uc ≥1(DC=100V) ≤7 Power     ●  
WG1645-152B 1500 1200-1800 / ≤2500 40 60 8 ～15 100Arms@Uc ≥1(DC=100V) ≤7 Power     ●  
WG1807 WG1807-351B 350 280-420 / ≤1000 40 80 12 ～15 不适用 ≥1(DC=100V) ≤6 φ18×6.8 Power     ●  
WG1807-601B 600 480-720 / ≤1400 40 80 12 ～15 100Arms@Uc ≥1(DC=100V) ≤6 Power     ●  
WG1807-801B 800 640-960 / ≤1600 40 80 12 ～15 100Arms@Uc ≥1(DC=100V) ≤6 Power     ●  
WG2006 WG2006-601B 600 480-720 / ≤1400 50 100 20 ～15 100Arms@Uc ≥1(DC=100V) ≤8 φ20×6.0 Power     ●  
WG2006-801B 800 640-960 / ≤1600 40 80 15 ～15 100Arms@Uc ≥1(DC=100V) ≤8 Power     ●  
WG2410 WG2410-351B 350 280-420 / ≤1000 80 100 20 ～15 不适用 ≥1(DC=100V) ≤10 φ24×10 Power     ●  
WG2410-601B 600 480-720 / ≤1400 50 100 20 ～15 100Arms@Uc ≥1(DC=100V) ≤10 Power     ●  
WG2410-801B 800 640-960 / ≤1600 50 100 20 ～15 100Arms@Uc ≥1(DC=100V) ≤10 Power     ●  
WG3012 WG3012-351B 350 280-420 / ≤1000 50 100 50 ～15 不适用 ≥1(DC=100V) ≤10 φ29.5×12 Power     ●  
WG3012-601B 600 480-720 / ≤1400 50 100 50 ～15 100Arms@Uc ≥1(DC=100V) ≤10 Power     ●  
WG3012-801B 800 640-960 / ≤1600 50 100 50 ～15 100Arms@Uc ≥1(DC=100V) ≤10 Power     ●  
WG3030 WG3030-601B 600 480-720 / ≤1300 100 200 100 ～15 100Arms@Uc ≥1(DC=100V) ≤7 φ29.5×29.5 Power     ●  
WG3030-801B 800 640-960 / ≤1600 100 / 100 ～15 100Arms@Uc ≥1(DC=100V) ≤7 Power     ●  
WG3030-102B 1000 800-1200 / ≤2500 100 160 100 ～15 100Arms@Uc ≥1(DC=100V) ≤7 Power     ●  
WG3030-152B 1500 1200-1800 / ≤3000 100 160 100 ～15 100Arms@Uc ≥1(DC=100V) ≤7 Power     ●  
WG3030-361B 3600 2880-4320 / ≤5500 100 / 100 ～15 100Arms@Uc ≥1(DC=100V) ≤7 Power     ●  
WGD506 WGD506-071B 70 56-84 ≤700 ≤650 5 / / ～8 不适用 ≥1(DC=50V) ≤1.0 Φ5.5×6 DC Power     ●  
WGD506-091B 90 72-108 ≤700 ≤650 5 / / ～8 不适用 ≥1(DC=50V) ≤1.0 DC Power     ●  
WGD506-231B 230 184-276 ≤750 ≤700 5 / / ～8 不适用 ≥1(DC=50V) ≤1.0 AC Power     ●  
WGD506-351B 350 280-420 ≤750 ≤650 5 / / ～12 不适用 ≥1(DC=100V) ≤1.0 Antenna protection     ●  
WGD506-471B 470 376-564 ≤850 ≤800 5 / / ～15 不适用 ≥1(DC=100V) ≤1.0 xDSL     ●  
WGD506-601B 600 480-720 ≤950 ≤900 5 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.0 AC Power     ●  
WGD506-801B 800 640-960 ≤1600 ≤1500 5 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.0 AC Power     ●  
WGD506-102B 1000 800-1200 ≤1600 ≤1400 5 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.0 AC Power     ●  
WGD506-152B 1500 1200-1800 ≤2700 ≤2500 5 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.0          
WGD506-362B 3600 2880-4320 ≤5500 ≤4600 3 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.0          
WGD806 WGD806-091B 90 72-108 ≤600 ≤550 10 / / ～12 不适用 ≥1(DC=50V) ≤1.5 Φ8×6 DC Power     ●  
WGD806-091LB 90 72-108 ≤650 ≤600 5 / / ～8 不适用 ≥1(DC=50V) ≤1.5 DC Power     ●  
WGD806-151B 150 120-180 ≤650 ≤600 10 / / ～12 不适用 ≥1(DC=100V) ≤1.5 DC Power     ●  
WGD806-231B 230 184-276 ≤700 ≤650 10 / / ～12 不适用 ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-601B 600 480-720 ≤1400 ≤1300 10 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-601HB 600 480-720 ≤1400 ≤1100 20 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-601LB 600 480-720 ≤1400 ≤1300 5 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-801B 800 640-960 ≤1400 ≤1350 10 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-801LB 800 600-1000 ≤1400 ≤1350 5 / / ～22 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-102B 1000 800-1200 ≤1600 ≤1400 10 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-102LB 1000 800-1200 ≤2000 ≤1600 5 / / ～8 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-152B 1500 1200-1800 ≤2700 ≤2500 10 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  
WGD806-362B 3600 2880-4320 ≤6000 ≤5200 5 / / ～15 100Arms@Uc ≥1(DC=100V) ≤1.5 AC Power     ●  



GDT：3R-SMD/DIP three-pin patch/plug-in Diode(Partial models listed)

3R-SMD、DIP系列名 型号 直流击穿电压100V/s（V） 100V/s电压范围（V） 脉冲击穿电压1kV/μs（99%）（V） 脉冲击穿电压1kV/μs（V） 脉冲耐流8/20μs,In（kA） 弧光电压Va @1A（V） 绝缘电阻(GΩ) 静电容量0.5VDC@1 MHz(pF) 尺寸L*W*H(mm) 应用 认证 Download
UL497B UL1449 新产品
WG3R3568 WG3R3568-091A 90 72-108 ≤650 ≤600 6 ～20 ≥1(DC=100V) ≤1.0 6.8x3.5x3.5 xDSL     ●  
WG3R0578 WG3R0578-091A 90 68-112 ≤700 ≤600 10 ～8 ≥1(DC=50V) ≤1.5 7.8x5.0x6.0 RS485/232/422     ●  
WG3R0578-231A 230 200-380 ≤800 ≤750 5 ＞15 ≥1(DC=100V) DC12V/AC24V     ●  
WG3R0578-351A 350 245-455 ≤850 ≤700 5 ＞33 DC30V     ●  
WG3R0578-421A 420 336-504 ≤950 ≤900 5 ～8 ≥1(DC=50V) xDSL     ●  
WG3R0578-651A 650 480-720 ≤1100 ≤1000 10 ～30 ≥1(DC=100V) Power/DSL     ●  
WG3R0576 WG3R0576-091B 90 63-117 / ≤700 5 ～15 ≥1(DC=100V) ≤1.5 φ5.0x7.6 xDSL     ●  
WG3R0576-151B 150 112-187 ≤750 5 ～15 ≥1(DC=100V) ≤1.5 xDSL     ●  
WG3R0576-231B 230 184-276 ≤800 5 ～15 ≥1(DC=100V) ≤1.5 xDSL     ●  
WG3R0576-351B 350 280-420 ≤850 5 ～15 ≥1(DC=100V) ≤1.5 xDSL     ●  
WG3R0576-471B 470 376-564 ≤1050 5 ～15 ≥1(DC=100V) ≤1.5 xDSL     ●  
WG3R0576-601B 600 480-720 ≤1200 5 ～15 ≥1(DC=100V) ≤1.5 xDSL     ●  
WG3RD810 WG3R0810-091B 90 67-112 / ≤650 20 ～15 ≥1(DC=100V) ≤1.5 Φ8.0x10 xDSL     ●  
WG3R0810-231B 230 184-276 ≤700     ●  
WG3R0810-351B 350 280-420 ≤800     ●  
WG3R0810-471B 470 376-564 ≤950     ●  
WG3R0810-601B 600 480-720 ≤1200     ●  
WG3R0810 WG3R0810-091A 90 67-112 / ≤650 20 ～15 ≥1(DC=100V) ≤1.5 Φ8.0x10 xDSL     ●  
WG3R0810-231A 230 184-276 ≤700     ●  
WG3R0810-351A 350 280-420 ≤800     ●  
WG3R0810-471A 470 376-564 ≤950     ●  
WG3R0810-601A 600 480-720 ≤1200     ●  
WG3R0810P WG3R0810P-091A 90 67-112 / ≤650 20 ～15 ≥1(DC=100V) ≤1.5 Φ8.0x10 xDSL     ●  
WG3R0810P-231A 230 184-276 ≤700     ●  
WG3R0810P-351A 350 280-420 ≤800     ●  
WG3R0810P-471A 470 376-564 ≤950     ●  
WG3R0810P-601A 600 480-720 ≤1200     ●  


GDT：M-GDT multi-gap patch/plug-in diode(Partial models listed)


M-GDT系列名 型号 直流击穿电压100V/s（V） 100V/s电压范围（V） 脉冲击穿电压1kV/μs（V） 脉冲耐流8/20μs,In（kA） 最大脉冲耐流8/20μs,Imax（kA） 脉冲耐流10/350μs,In（kA） 绝缘电阻(GΩ) 静电容量0.5VDC@1 MHz(pF) 尺寸L*W*H(mm) 应用 认证 Download
UL497B UL1449 新产品
WG10M5 WG10M5-122R 1200 420-1100 ≤2200 20 40 4 ≥1(DC=100V) ≤1.5 8.3x8.3x16.5 Power     ●  
WG16M5 WG16M5-801A/B 800 ≥600 ≤2200 30 60 15 ≥0.1(DC=100V) ≤5 φ16x22.6 Power     ●  
WG16M7 WG16M5-801A/B 800 ≥800 ≤2200 30 60 15 ≥0.1(DC=100V) ≤5 φ16x30.2 Power     ●  
WG20M5 WG20M5-801A/B 800 ≥600 ≤2500 50 100 25 ≥0.1(DC=100V) ≤5 φ20x22 Power     ●  
WG20M7 WG20M7-801A/B 800 ≥800 ≤2500 50 100 25 ≥0.1(DC=100V) ≤3 φ20x30.8 Power     ●  
WG25M5 WG25M7-601A/B 600 400-780 ≤1500 80 120 30 ≥0.1(DC=100V) ≤3 φ25x23 Power     ●  
WG25M7 WG25M7-801A/B 800 700-1200 ≤2000 80 120 30 ≥0.1(DC=100V) ≤3 φ25x33.5 Power     ●  
WG30M5 WG30M7-801A/B 800 ≥600 ≤2500 80 160 50 ≥0.1(DC=100V) ≤5 φ29.5x24 Power     ●  
WG30M7 WG30M7-801A/B 800 ≥800 ≤2500 80 160 50 ≥0.1(DC=100V) ≤5 φ29.5x32 Power     ●  

 

 



 

 

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